• Part: EMFA0P02J
  • Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 161.10 KB
Download EMFA0P02J Datasheet PDF
Excelliance MOS
EMFA0P02J
EMFA0P02J is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 100mΩ -3.4A S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±12 -3.4 -2.4 -14 1.25 0.8 -55 to 150 UNIT V W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RθJA Junction-to-Lead4 RθJL 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% 3100°C / W when mounted on a 1 in2 pad of 2 oz copper. 4 RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to...