• Part: EMFA0P02JS
  • Description: P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 164.19 KB
Download EMFA0P02JS Datasheet PDF
Excelliance MOS
EMFA0P02JS
EMFA0P02JS is P-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured by Excelliance MOS.
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -20V RDSON (MAX.) 100mΩ -3.4A S Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TA = 25 °C ID TA = 70 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg LIMITS ±12 -3.4 -2.4 -14 1.04 0.66 -55 to 150 UNIT V W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient3 RθJA (T ≤ 10sec) RθJA (Steady State) 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% 3The device mounted on a 1 in2 pad of 2 oz copper. TYPICAL MAXIMUM 83 120 UNIT °C / W 2018/8/13 p.1 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL...