Datasheet4U Logo Datasheet4U.com

FKN2510 - N-Channel MOSFET

Datasheet Summary

Description

The FKN2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKN2510 meet the RoHS and Green Product requirement with full function reliability approved.

📥 Download Datasheet

Datasheet preview – FKN2510

Datasheet Details

Part number FKN2510
Manufacturer FETek
File Size 523.52 KB
Description N-Channel MOSFET
Datasheet download datasheet FKN2510 Datasheet
Additional preview pages of the FKN2510 datasheet.

📁 Similar Datasheet

  • FKN200 - Wirewound Resistors (YAGEO)
  • FKN2L60 - Bi-Directional Triode Thyristor Planar Silicon (Fairchild Semiconductor)
  • FKN2WS - Wirewound Resistors (YAGEO)
  • FKN-50 - Wirewound Resistors (YAGEO)
  • FKN08PN40 - TRIAC (Fairchild Semiconductor)
  • FKN08PN60 - TRIAC (Fairchild Semiconductor)
  • FKN100 - Wirewound Resistors (YAGEO)
  • FKN1N60SA - TRIAC (Fairchild Semiconductor)
  • FKN1WS - Wirewound Resistors (YAGEO)
  • FKN300 - Wirewound Resistors (YAGEO)
Other Datasheets by FETek

Full PDF Text Transcription

Click to expand full text
FETek Technology Corp.  Green Device Available  Super Low Gate Charge  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKN2510 N-Ch 20V Fast Switching MOSFETs Product Summary BVDSS 20V RDSON 26mΩ ID 6.0A Description The FKN2510 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN2510 meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V1 Continuous Drain Current, VGS @ 4.
Published: |