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FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKN2607
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 32mΩ
ID -4.7A
Description
The FKN2607 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications The FKN2607 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.
FKN2607 Datasheet
