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FKN2611 - P-Channel MOSFET

Datasheet Summary

Description

The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

The FKN2611 meet the RoHS and Green Product requirement with full function reliability approved.

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Datasheet Details

Part number FKN2611
Manufacturer FETek
File Size 543.88 KB
Description P-Channel MOSFET
Datasheet download datasheet FKN2611 Datasheet
Additional preview pages of the FKN2611 datasheet.

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Full PDF Text Transcription

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FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKN2611 P-Ch 20V Fast Switching MOSFETs Product Summary BVDSS -20V RDSON 45mΩ ID -4.9A Description SOT 23 Pin Configurations The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKN2611 meet the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.
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