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FKN2609 - P-Channel MOSFET

Datasheet Summary

Description

The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved.

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Datasheet Details

Part number FKN2609
Manufacturer FETek
File Size 534.51 KB
Description P-Channel MOSFET
Datasheet download datasheet FKN2609 Datasheet
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Full PDF Text Transcription

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FETek Technology Corp.  Super Low Gate Charge  Green Device Available  Excellent Cdv/dt effect decline  Advanced high cell density Trench technology FKN2609 P-Ch 20V Fast Switching MOSFETs Product Summary BVDSS -20V RDSON 75mΩ ID -3.1A Description The FKN2609 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN2609 meets the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ Thermal Data Symbol RθJA RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.
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