Datasheet Summary
FNK06N02C N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V
DS(ON)<10.0mΩ @ VGS=2.5V
- High Power and current handing capability
- Lead free product is acquired
Schematic diagram
Application
- Battery Switch
- Load switch
- Power management
Package Marking And Ordering Information
Device Marking
Device
Device Package
06N02C
TO-251
Reel Size
Tape...