FNK FNK06N02C
The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.| Part No. | FNK06N02C |
|---|---|
| Datasheet | FNK06N02C Download |
| Manufacturer |  FNK |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.5V● High Power and current handing capability
● Lead free product is acquired Schematic diagram Application
●Battery Switch
●Load switch
●Power management Package Marking And Ordering Information Device Marking Device Device Package 06N02C FNK06N02C TO-251 Reel Size Tape width Quantity
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25 Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ ID TA =70℃ Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 20 ±12 50 20 20 15 80 50 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 40 ℃/WELECTRICAL CHARACTERISTICS
(TA=25℃unless otherwise noted) Page 1 v1.0 Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current...