Datasheet Summary
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ)
Top View
18 27 36 45
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Top View
DFN5X6 Bottom View
Application
- Power switching application
- Load switch
PIN1
Package Marking and Ordering Information
Device Marking
Device
De...