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FNK06NS04E - N-Channel Power MOSFET

Description

The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ) Top View 18 27 36 45 Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Top View DFN5X6 Bottom View.

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Datasheet Details

Part number FNK06NS04E
Manufacturer FNK
File Size 1.11 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK06NS04E Datasheet
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FNK06NS04E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.
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