Datasheet Summary
N-Channel Trench Power MOSFET
General Description
The FNK06N07E is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
Top View
Features
- VDS=65V; ID=88A@ VGS=10V;
RDS(ON)<7.45mΩ @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Top View
DFN5X6 Bottom View
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN5- 6
Reel Size
- Table 1....