FNK FNK06N07E
The FNK06N07E is N-channel MOS Field Effect Transistor designed for high current switching applications.| Part No. | FNK06N07E |
|---|---|
| Datasheet | FNK06N07E Download |
| Manufacturer |  FNK |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Top ViewFEATURES
● VDS=65V; ID=88A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Top View DFN5X6 Bottom View Package Marking and Ordering Information Device Marking Device Device Package FNK06N07E FNK06N07E DFN5*6 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Derat
