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FNK06N07E - N-Channel Power MOSFET

Description

The FNK06N07E is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Features

  • VDS=65V; ID=88A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number FNK06N07E
Manufacturer FNK
File Size 3.43 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK06N07E Datasheet
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Full PDF Text Transcription

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FNK06N07E N-Channel Trench Power MOSFET General Description The FNK06N07E is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Top View Features ● VDS=65V; ID=88A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Top View DFN5X6 Bottom View Package Marking and Ordering Information Device Marking Device Device Package FNK06N07E FNK06N07E DFN5*6 Reel Size - Table 1.
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