Datasheet Summary
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK06P20E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
- VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Schematic diagram
Application
- Load switch
Top View
DFN5X6 Bottom View
PIN1
Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN5-...