FNK FNK06P20E
The FNK06P20E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.| Part No. | FNK06P20E |
|---|---|
| Datasheet | FNK06P20E Download |
| Manufacturer |  FNK |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FNK06P20EGENERAL FEATURES
● VDS =-60V,ID =-50A RDS(ON) <24mΩ@ VGS=-10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Schematic diagram Application
● Load switch Top View DFN5X6 Bottom View PIN1 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK06P20E FNK06P20E DFN5*6-8L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power D
