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13N06L - FQB13N06L

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

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Datasheet Details

Part number 13N06L
Manufacturer Fairchild Semiconductor
File Size 696.68 KB
Description FQB13N06L
Datasheet download datasheet 13N06L Datasheet
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Full PDF Text Transcription

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FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. D TM Features • • • • • • • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.
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