Datasheet Details
| Part number | 2N60B |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 676.23 KB |
| Description | 600V N-Channel MOSFET |
| Datasheet |
 2N60B Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Key Features
- 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V.
- Low gate charge ( typical 12.5 nC).
- Low Crss ( typical 7.6 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !.
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- ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.