Fairchild Semiconductor 2N60B
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.| Part No. | 2N60B |
|---|---|
| Datasheet | 2N60B Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.FEATURES
● 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V● Low gate charge ( typical 12.5 nC)
● Low Crss ( typical 7.6 pF)
● Fast switching
● 100% avalanche tested
● Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !
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ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 sec...
