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2N60B Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V.
  • Low gate charge ( typical 12.5 nC).
  • Low Crss ( typical 7.6 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GS D2-PAK SSW Series GDS I2-PAK SSI Series G! D !.
  • ◀▲.
  • ! S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) -.

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2N60B Distributor