Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V.
- Low gate charge ( typical 12.5 nC).
- Low Crss ( typical 7.6 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
GS
D2-PAK
SSW Series
GDS
I2-PAK
SSI Series
G!
D
!.
- ◀▲.
- !
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) -.
2N60B Datasheet
