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FCD7N60 - N-Channel MOSFET

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.

Features

  • 650 V @ TJ = 150°C.
  • Typ. RDS(on) = 530 mΩ.
  • Ultra Low Gate Charge (Typ. Qg = 23 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 60 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

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Datasheet preview – FCD7N60

Datasheet Details

Part number FCD7N60
Manufacturer Fairchild Semiconductor
File Size 414.02 KB
Description N-Channel MOSFET
Datasheet download datasheet FCD7N60 Datasheet
Additional preview pages of the FCD7N60 datasheet.

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Full PDF Text Transcription

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FCD7N60 — N-Channel SuperFET® MOSFET FCD7N60 N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ Features • 650 V @ TJ = 150°C • Typ. RDS(on) = 530 mΩ • Ultra Low Gate Charge (Typ. Qg = 23 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) • 100% Avalanche Tested • RoHS Compliant Application • LCD / LED TV and Monitor • Lighting • Solar Inverter • AC-DC Power Supply December 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
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