FCD7N60 Datasheet | Fairchild Semiconductor

- N-Channel SuperFET® MOSFET N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ Features - 650 V @ TJ = 150°C - Typ. RDS(on) = 530 mΩ - Ultra Low Gate Charge (Typ. Qg = 23 nC) - Low Effective Output Capacitance (Typ. Coss(eff.) = 60 pF) - 100% Avalanche Tested - RoHS pliant Application - LCD / LED TV and Monitor - Lighting - Solar Inverter - AC-DC Power Supply December 2013 Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide...