FCP4N60 Datasheet | Fairchild Semiconductor

FCP4N60 600V N-Channel MOSFET 600V N-Channel MOSFET Features - 650V @TJ = 150°C - Typ. RDS(on) = 1.0Ω - Ultra low gate charge (typ. Qg = 12.8n C) - Low effective output capacitance (typ. Coss.eff = 32p F) - 100% avalanche tested Super FET Description Super FETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. January 2007 G G DS TO-220 FCP...