FCP7N60 Datasheet | Fairchild Semiconductor

FCP7N60 / FCPF7N60 600V N-Channel MOSFET Super FET FCP7N60 / FCPF7N60 600V N-Channel MOSFET Features - 650V @TJ = 150°C - Typ. RDS(on) = 0.53Ω - Ultra low gate charge (typ. Qg = 25n C) - Low effective output capacitance (typ. Coss.eff = 60p F) - 100% avalanche tested Description Super FETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, Super FET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. ! " G! G DS ! " " " TO-220 GD...