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FCP9N60N - N-Channel MOSFET

Description

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies.

Features

  • RDS(on) = 0.33Ω ( Typ. )@ VGS = 10V, ID = 4.5A.
  • Ultra low gate charge ( Typ. Qg = 22nC).
  • Low effective output capacitance.
  • 100% avalanche tested.
  • RoHS compliant TM SupreMOS tm August 2009.

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Note: The manufacturer provides a single datasheet file (FCP9N60N_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT N-Channel MOSFET 600V, 9A, 0.385Ω Features • RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Ultra low gate charge ( Typ. Qg = 22nC) • Low effective output capacitance • 100% avalanche tested • RoHS compliant TM SupreMOS tm August 2009 Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
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