FCP9N60N Datasheet | Fairchild Semiconductor

FCP9N60N / FCPF9N60NT N-Channel MOSFET FCP9N60N / FCPF9N60NT N-Channel MOSFET 600V, 9A, 0.385Ω Features - RDS(on) = 0.33Ω ( Typ.)@ VGS = 10V, ID = 4.5A - Ultra low gate charge ( Typ. Qg = 22n C) - Low effective output capacitance - 100% avalanche tested - Ro HS pliant TM Supre MOS tm August 2009 Description The Supre MOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, Supre MOS provides world class Rsp, superior switching performance and ruggedness. This Supre MOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/tele power, FPD TV power, ATX power, and industrial power applications. TO-220 FCP Series GD S TO-220F FCPF Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS .. V Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt Power Dissipation - Derate above 25o C (TC = 25o C) (Note 3) -Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) -Continuous (TC = 25o C) FCPF9N60NT 600 ±30 9.0- 5.7- 27- 135 3 0.83 100 20 Units V V A A m J A m J V/ns V/ns ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL 9.0 5.7 27 83.3 0.67 300 29.8 0.24 -55 to +150 W W/o C o o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Drain current limited by maximum junction...