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FDB088N08 Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDB088N08 — N-Channel PowerTrench® MOSFET FDB088N08 N-Channel PowerTrench® MOSFET 75 V, 85 A, 8.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous Continuous Continuous (TC (TC (TC = = = 25oC, 100oC, 25oC, Silicon Limited) Silicon Limited) Package Limited) IDM EAS dv/dt PD Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Pulsed (TC = 25oC) - Derate above 25oC (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds FDB088N08 75 ±20 85 60 120 340 309 10 160 1.06 -55 to +175 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.

Key Features

  • RDS(on) = 7.3 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • 100% Internal RG Screening for Easy Paralleling Operation.
  • RoHS Compliant.

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