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FDB16AN08A0 — N-Channel PowerTrench® MOSFET
November 2013
FDB16AN08A0
N-Channel PowerTrench® MOSFET
75 V, 58 A, 16 mΩ
Features
Applications
• RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC (Typ.) @ VGS = 10 V • Low Miller Charge
• Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies
• Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82660
D D
G S
D2-PAK
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted.