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FDB16AN08A0 - N-Channel MOSFET

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FDB16AN08A0 — N-Channel PowerTrench® MOSFET November 2013 FDB16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 58 A • QG(tot) = 28 nC (Typ.) @ VGS = 10 V • Low Miller Charge • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) Formerly developmental type 82660 D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.