FDB28N30 Datasheet PDF (MOSFET) | Download Fairchild Semiconductor FDB28N30

FDB28N30 - MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 0.108Ω ( Typ. )@ VGS = 10V, ID = 14A.
Low gate charge ( Typ. 39nC).
Low Crss ( Typ. 35pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant June 2007 UniFETTM tm.

Datasheet Details

Part number	FDB28N30
Manufacturer	Fairchild Semiconductor
File Size	289.87 KB
Description	MOSFET
Datasheet	FDB28N30 Datasheet
Additional preview pages of the FDB28N30 datasheet.

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Full PDF Text Transcription

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FDB28N30 N-Channel MOSFET FDB28N30 N-Channel MOSFET 300V, 28A, 0.129Ω Features • RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A • Low gate charge ( Typ. 39nC) • Low Crss ( Typ. 35pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant June 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Published: Jan 13, 2017 |