FDB28N30 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...
FDB28N30 Key Features
- RDS(on) = 0.108Ω ( Typ.)@ VGS = 10V, ID = 14A
- Low gate charge ( Typ. 39nC)
- Low Crss ( Typ. 35pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Continuous (