FDB6670AL
FDB6670AL is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
80 A, 30 V. RDS(ON) = 0.0065 Ω @ VGS=10 V, RDS(ON) = 0.0085 Ω @ VGS= 4.5 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trench technology for extremely low RDS(ON). 175°C maximum junction temperature rating.
S Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
(Note 1) (Note 1)
T C = 25°C unless otherwise noted
FDP6670AL 30 ±20 80 240 75 0.5 -65 to 175 275
Units V V A
W W/°C °C °C
THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDP6670AL Rev.C
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 80 A 300 80 m J A
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS =...
