FDB6676 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) . Features - 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V - Critical DC electrical parameters specified at elevated temperature - High performance trench technology for extremely low RDS(ON) - 175°C maximum junction temperature rating Applications - Synchronous rectifier - DC/DC converter . G D S TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 30 ± 16 (Note 1) (Note 1) Units V V A W W °C °C 84 240 93 0.48 -65 to +175 Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDP6676 FDB6676 Device FDP6676 FDB6676 Reel Size Tube 13” Tape width n/a 24mm Quantity 45 800 units 2000 Fairchild Semiconductor Corporation FDP6676/FDB6676 Rev...