FDB6676 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON).
FDB6676 Key Features
- 42 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
- Critical DC electrical parameters specified at elevated temperature
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating