FDB6670S Datasheet | Fairchild Semiconductor

Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670S includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of the FDP6670S/FDB6670S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. Features - 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V - Includes Sync FET Schottky body diode - Low gate charge (23n C typical) - High performance trench technology for extremely low RDS(ON) and fast switching - High power and current handling capability G D TO-220 S FDP Series TO-263AB FDB Series Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A =25 o C unless otherwise noted Parameter Ratings 30 ±20 (Note 1) (Note 1) Units V V A W W/°C °C °C 62 150 62.5 0.5 - 55 to +150 275 Total Power Dissipation @ TC = 25° C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.1 62.5 °C/W °C/W Package Marking and Ordering Information Device Marking FDB6670S FDP6670S Device FDB6670S FDP6670S Reel Size 13’’ Tube Tape width 24mm n/a Quantity 800 units 45 © 2001 Fairchild Semiconductor Corporation FDP6670S/FDB6670S Rev E(W) FDP6670S/FDB6670S...