FDB6670S - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDB6670S
Manufacturer	Fairchild Semiconductor
File Size	93.63 KB
Description	N-Channel MOSFET
Datasheet	FDB6670S Datasheet
Additional preview pages of the FDB6670S datasheet.

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 12.5 mΩ @ VGS = 4.5 V.
Includes SyncFET Schottky body diode.
Low gate charge (23nC typical).
High performance trench technology for extremely low RDS(ON) and fast switching.
High power and current handling capability D D G G D TO-220 S FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current.

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Published: Mar 30, 2005 |