FDB6670AS - 30V N-Channel PowerTrench SyncFET

Product Overview

Fairchild Semiconductor

Part number	FDB6670AS
Manufacturer	Fairchild Semiconductor
File Size	95.95 KB
Description	30V N-Channel PowerTrench SyncFET
Datasheet	FDB6670AS Datasheet
Additional preview pages of the FDB6670AS datasheet.

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V.
Includes SyncFET Schottky body diode.
Low gate charge (28nC typical).
High performance trench technology for extremely low RDS(ON) and fast switching.
High power and current handling capability DD G D S TO-220 FDP Series G S TO-263AB FDB Series G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source.

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Published: Jan 15, 2016 |