FDB6670AS Datasheet | Fairchild Semiconductor

Description This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6670AS includes an integrated Schottky diode using Fairchild’s monolithic Sync FET technology. The performance of the FDP6670AS/FDB6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6670A/FDB6670A in parallel with a Schottky diode. Features - 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V - Includes Sync FET Schottky body diode - Low gate charge (28n C typical) - High performance trench technology for extremely low RDS(ON) and fast switching - High power and current handling capability TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) TJ, TSTG TL Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size 13’’ FDB6670AS_NL (Note 3) 13’’ FDP6670AS FDP6670AS Tube...