FDB8860 Datasheet | Fairchild Semiconductor

FDB8860 N-Channel Logic Level Power Trench® MOSFET N-Channel Logic Level Power Trench® MOSFET 30V, 80A, 2.6mΩ Features - RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A - Qg(5) = 89n C (Typ), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Ro HS pliant Applications - DC-DC Converters December 2010 FDB8860 Rev A2 ©2010 Fairchild Semiconductor Corporation FDB8860 Rev.A2 .fairchildsemi. FDB8860 N-Channel Logic Level Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V, TC < 163o C) Continuous (VGS = 5V, TC < 162o C) Continuous (VGS = 10V, TC = 25o C, with RθJA = 43o C/W) Pulsed Single Pulse Avalanche Energy (Note1) Power Dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 80 31 Figure 4 947 254 1.7 -55 to...