FDD050N03B Datasheet | Fairchild Semiconductor

FDD050N03B N-Channel PowerTrench® MOSFET March 2013 N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ Features - RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A - Fast Switching Speed - Low Gate Charge, QG = 33 nC( Typ.) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - RoHS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server / Tele PSU D-PAK (TO-252) MOSFET Maximum...