FDD050N03B Description
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Package limitation current is 50A. Thermal Characteristics Symbol RθJC RθJA Parameter , Junction to Case, Max.
FDD050N03B Key Features
- RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A
- Fast Switching Speed
- Low Gate Charge, QG = 33 nC( Typ.)
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
FDD050N03B Applications
- Synchronous Rectification for ATX / Server / Tele PSU