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FDD050N03B - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU D D G S D-PA

Key Features

  • RDS(on) = 3.7 mΩ ( Typ. )@ VGS = 10 V, ID = 25 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 33 nC( Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

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FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ Features • RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge, QG = 33 nC( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.