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FDD068AN03L - N-Channel MOSFET

Key Features

  • rDS(ON) = 5.7mΩ (Typ. ), VGS = 4.5V, ID = 35A.
  • Qg(5) = 24nC (Typ. ), VGS = 5V.
  • Low Miller Charge.
  • Low QRR Body Diode.
  • UIS Capability (Single Pulse and Repetitive Pulse).
  • Qualified to AEC Q101.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD068AN03L / FDU068AN03L December 2003 FDD068AN03L / FDU068AN03L N-Channel PowerTrench® MOSFET 30V, 35A, 6.8mΩ Features • rDS(ON) = 5.7mΩ (Typ.), VGS = 4.5V, ID = 35A • Qg(5) = 24nC (Typ.), VGS = 5V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • 12V Automotive Load Control • Starter / Alternator Systems • Electronic Power Steering Systems • ABS • DC-DC Converters G S D I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 154oC, VGS = 10V) ID Continuous (TC < 150oC, VGS = 4.