FDD45AN06LA0 Datasheet | Fairchild Semiconductor

.. February 2004 N-Channel Power Trench® MOSFET 60V, 22A, 45mΩ Features - r DS(ON) = 39mΩ (Typ.), VGS = 5V, ID = 22A - Qg(tot) = 8.3n C (Typ.), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 83535 Applications - Motor / Body Load Control - ABS Systems - Powertrain Management - Injection Systems - DC-DC converters and Off-line UPS - Distributed Power Architectures and VRMs - Primary Switch for 12V and 24V systems DRAIN (FLANGE) GATE SOURCE TO-252AA FDD SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) ID Continuous (TC = 25o C, VGS = 5V) Continuous (TC = 100o C, VGS = 5V) Continuous (TA = 25o C, VGS = 5V, Rθ JA = 52o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 25 22 16 5.2 Figure 4 15 55 0.37 -55 to 175 A A A A A m J W W/o C o Ratings 60 ±20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 2.73 100 52 o C/W o o C/W...