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FDD8882 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Key Features

  • ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability.
  • RoHS Complicant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET March 2015 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ Features ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability „ RoHS Complicant Application ! DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semiconductor Corporation 1 FDD8882/FDU8882 Rev. 1.