FDD8882 Datasheet | Fairchild Semiconductor

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET March 2015 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ Features ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability - RoHS plicant Application ! DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. S DTO-P-2A5K2...