FDM2452NZ Overview
This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package.
FDM2452NZ Key Features
- 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V
- ESD protection Diode(note 3)
- Low Profile
- 0.8 mm maximum
- in the new package MicroFET 2 x 5 mm