FDM2452NZ Datasheet | Fairchild Semiconductor

July 2005 Monolithic mon Drain N-Channel 2.5V Specified PowerTrench® MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v on special MicroFET lead frame with all the drains on one side of the package. Features - 8.1 A, 30 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 25 mΩ @ VGS = 2.5 V - ESD protection Diode(note 3) - Low Profile - 0.8 mm maximum - in the new package MicroFET 2 x 5 mm Applications - Li-Ion Battery Pack PIN 1 S1 S1 G1 G2 Bottom Drain Contact Q2 G1 S2 5 6 2 1 S1 S2 S2 S2 G2 Q1 Bottom Drain Contact S1 MLP 2x5 Absolute...