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FDM6296 - Single N-Channel / Logic-Level / PowerTrench MOSFET

General Description

This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters.

Key Features

  • 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V.
  • Low Qg, Qgd and Rg for efficient switching performance.
  • Low Profile.
  • MicroFET 3.3 x 3.3 mm General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET December 2004 FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MicroFET 3.3 x 3.3 mm General Description This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds(on) and gate charge this device can be effectively used as a “high side” control switch or “low side” synchronous rectifier.