FDMB3900AN Datasheet | Fairchild Semiconductor

FDMB3900AN Dual N-Channel Power Trench® MOSFET Dual N-Channel Power Trench® MOSFET 25 V, 7.0 A, 23 mΩ June 2013 Features General Description - Max r DS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A - Max r DS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A - Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. - Low gate charge - High performance trench technology for extremely low r DS(on) - High power and current handling capability These devices are well suited for low voltage and battery powered applications where the low in-line power loss and fast switching are required. - Ro HS pliant Pin 1 Micro FET 3X1.9 D2 5 D2 6 D1 7 D1 8 Q2 4 G2 3 S2 Q1 2 G1 1 S1 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to...