FDMB3900AN Description
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A Fast switching speed These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low gate charge High performance trench technology for extremely...
FDMB3900AN Key Features
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
- Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability