FDMB506P Datasheet | Fairchild Semiconductor

December 2005 P-Channel 1.8V Logic Level Power Trench MOSFET General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Features - - 6.8 A, - 20V. RDS(ON) = 30 mΩ @ VGS = - 4.5V RDS(ON) = 38 mΩ @ VGS = - 2.5V RDS(ON) = 70 mΩ @ VGS = - 1.8V - Low profile - 0.8 mm maximum - Fast switching Applications - Load switch - DC/DC Conversion - Ro HS pliant PIN 1 GATE .. 5 6 7 8 4 3 2 1 SOURCE Micro...