FDMB506P Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
FDMB506P Key Features
- 6.8 A, -20V. RDS(ON) = 30 mΩ @ VGS = -4.5V RDS(ON) = 38 mΩ @ VGS = -2.5V RDS(ON) = 70 mΩ @ VGS = -1.8V
- Low profile
- 0.8 mm maximum
- Fast switching