FDMC86261P Overview
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications Active Clamp Switch Load Switch Top Bottom Pin 1 SS S G MLP 3.3x3.3 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID...
FDMC86261P Key Features
- Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
- Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
- Very low RDS-on mid voltage P channel silicon technology
- This product is optimised for fast switching