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FDMC86261P Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology.

This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.

Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 SS S G MLP 3.3x3.3 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Contin

Overview

FDMC86261P P-Channel PowerTrench® MOSFET June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160.

Key Features

  • Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A.
  • Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A.
  • Very low RDS-on mid voltage P channel silicon technology optimised for low Qg.
  • This product is optimised for fast switching.

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