FDMS5352 Datasheet | Fairchild Semiconductor

FDMS5352 N-Channel Power Trench® MOSFET October 2014 N-Channel Power Trench® MOSFET 60V, 49A, 6.7m: Features General Description - Max r DS(on) = 6.7m: at VGS = 10V, ID = 13.6A - Max r DS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A - Advanced Package and Silicon bination for low r DS(on) - MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. - 100% UIL Tested Application - Ro HS pliant - DC - DC Conversion Top Bottom Pin 1 Power 56 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche...