Datasheet Details
| Part number | FDMS5352 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.07 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
 FDMS5352 Datasheet
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| Part number | FDMS5352 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 370.07 KB |
| Description | N-Channel Power Trench MOSFET |
| Datasheet |
FDMS5352 Datasheet
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Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
100% UIL Tested Application RoHS Compliant DC - DC Conversion Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energ
FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.
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