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FDMS5352 - N-Channel Power Trench MOSFET

Description

Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Tr

Features

  • General.

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FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.7m: Features General Description „ Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A „ Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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