Datasheet4U Logo Datasheet4U.com

FDMS86540 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod

Features

  • Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A.
  • Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant May 2015 General.

📥 Download Datasheet

Datasheet preview – FDMS86540

Datasheet Details

Part number FDMS86540
Manufacturer Fairchild Semiconductor
File Size 334.06 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS86540 Datasheet
Additional preview pages of the FDMS86540 datasheet.
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS86540 N-Channel PowerTrench® MOSFET FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 129 A, 3.4 mΩ Features „ Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A „ Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant May 2015 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Published: |