Datasheet Summary
FDMS86540 N-Channel PowerTrench® MOSFET
N-Channel PowerTrench® MOSFET
60 V, 129 A, 3.4 mΩ
Features
- Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A
- Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low...