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FDMS86540 N-Channel PowerTrench® MOSFET
FDMS86540
N-Channel PowerTrench® MOSFET
60 V, 129 A, 3.4 mΩ
Features
Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.