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FDMS9620S - 30V Dual N-Channel PowerTrench MOSFET

General Description

This device includes two specialized MOSFETs in a unique dual Power 56 package.

It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.

The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 21.5m: at VGS = 10V, ID = 7.5A.
  • Max rDS(on) = 29.5m: at VGS = 4.5V, ID = 6.5A Q2: N-Channel.
  • Max rDS(on) = 13m: at VGS = 10V, ID = 10A.
  • Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.5A.
  • Low Qg high side MOSFET.
  • Low rDS(on) low side MOSFET.
  • Thermally efficient dual Power 56 package.
  • Pinout optimized for simple PCB design.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

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FDMS9620S Dual N-Channel PowerTrench® MOSFET May 2014 FDMS9620S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 16A, 21.5m: Q2: 30V, 18A, 13m: Features Q1: N-Channel „ Max rDS(on) = 21.5m: at VGS = 10V, ID = 7.5A „ Max rDS(on) = 29.5m: at VGS = 4.5V, ID = 6.5A Q2: N-Channel „ Max rDS(on) = 13m: at VGS = 10V, ID = 10A „ Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.5A „ Low Qg high side MOSFET „ Low rDS(on) low side MOSFET „ Thermally efficient dual Power 56 package „ Pinout optimized for simple PCB design „ RoHS Compliant General Description This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.