FDP083N15A Datasheet | Fairchild Semiconductor

- N-Channel Power Trench® MOSFET April 2015 N-Channel Power Trench® MOSFET 150 V, 117 A, 8.3 mΩ Features - RDS(on) = 6.85 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A - Fast Switching Speed - Low Gate Charge, QG = 64.5 n C (Typ.) - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - Ro HS pliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications - Synchronous Rectification for ATX / Server / Tele PSU - Battery Protection Circuit - Motor Drives and Uninterruptible Power Supplies - Micro Solar Inverter GDS...