FDP6021P
FDP6021P is 20V P-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This P-Channel power MOSFET uses Fairchild’s low voltage Power Trench process. It has been optimized for power management applications.
Features
- - 28 A,
- 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V
- Critical DC electrical parameters specified at elevated temperature
- High performance trench technology for extremely low RDS(ON)
- 175°C maximum junction temperature rating
Applications
- Battery management
- Load switch
- Voltage regulator
.
G D S TO-220
FDP Series
TO-263AB
FDB Series
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25o C unless otherwise noted
Parameter
Ratings
- 20 ±8
(Note 1) (Note 1)
Units
V V A W W °C °C
- 28
- 80 37 0.25
- 65 to +175
Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics...
