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FDPF320N06L - N-Channel MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Consumer Appliances LCD/LED/PDP TV D GDS G TO-220F S MOS

Key Features

  • RDS(on) = 20 mΩ (Typ. ) @ VGS = 10 V, ID = 21 A.
  • RDS(on) = 23 mΩ (Typ. ) @ VGS = 5 V, ID = 17 A.
  • Low Gate Charge (Typ. 23.2 nC).
  • Low Crss (Typ. 64 pF).
  • Fast Switching Speed.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPF320N06L — N-Channel Logic Level PowerTrench® MOSFET December 2013 FDPF320N06L N-Channel Logic Level PowerTrench® MOSFET 60 V, 21 A, 25 mΩ Features • RDS(on) = 20 mΩ (Typ.) @ VGS = 10 V, ID = 21 A • RDS(on) = 23 mΩ (Typ.) @ VGS = 5 V, ID = 17 A • Low Gate Charge (Typ. 23.2 nC) • Low Crss (Typ. 64 pF) • Fast Switching Speed • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications • Consumer Appliances • LCD/LED/PDP TV D GDS G TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.