Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Consumer Appliances
LCD/LED/PDP TV
D
GDS
G
TO-220F
S
MOS
Features
- RDS(on) = 20 mΩ (Typ. ) @ VGS = 10 V, ID = 21 A.
- RDS(on) = 23 mΩ (Typ. ) @ VGS = 5 V, ID = 17 A.
- Low Gate Charge (Typ. 23.2 nC).
- Low Crss (Typ. 64 pF).
- Fast Switching Speed.
- 100% Avalanche Tested.
- Improved dv/dt Capability.
- RoHS Compliant.