FDR4410 Datasheet | Fairchild Semiconductor

Description The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The Super SOTTM-8 package is 40% smaller than the SO-8 package. The Super SOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. Features 9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary Super SOTTM-8 small outline surface mount package with high power and current handling capability. SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 4 3 2 1 10 44 D G pin 1 Super SOT -8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation TA = 25o C unless otherwise noted FDR4410 30 ±20 (Note 1a) Units V V A 9.3 40 (Note 1a) (Note 1b) (Note 1c) 1.8 1 0.9 -55 to 150 TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note...