FDR4420A Datasheet | Fairchild Semiconductor

Description The Super SOT-8 family of N-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product. These MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where small package size is required without promising power handling and fast switching. Features 11 A, 30 V. RDS(ON) = 0.009 Ω @ VGS = 10 V, RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. Small footprint 38% smaller than a standard SO-8. Low profile package(1mm thick). Power handling capability similar to SO-8. SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 4 3 2 1 6 7 8 pin 1 Super SOT TM-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Draint Current - Continuous - Pulsed Maximum Power Dissipation TA = 25o C unless otherwise noted FDR4420A 30 ±20 (Note 1a) Units V V A 11 40 (Note 1a) (Note 1b) (Note 1c) 1.8 1 0.9 -55 to 150 TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDR4420 Rev.D Electrical Characteristics...