FDR6580
FDR6580 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
11 A, 20 V. RDS(ON) = 0.009 Ω @ VGS = 4.5 V RDS(ON) = 0.013 Ω @ VGS = 2.5 V. Low gate charge. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
Applications
Load switch Motor driving Power Management
5 6
4 3 2 1
7 8
Super SOT -8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
(Note 1a)
Units
±8 11 50 1.8 1.0 0.9 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
70 20
°C/W °C/W
Package Outlines and Ordering Information
Device...
