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FDR856P Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect.

General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed.

Key Features

  • - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. SuperSOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power comperable to SO-8. High density cell design for extremely low RDS(ON). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D S S 6 85 P G 5 6 4 3 2 1 pin 1 SuperSOT TM-8 D D D 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage TA = 25oC unless other wise noted FDR85.

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