FDR856P Datasheet | Fairchild Semiconductor

March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Super SOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where low in-line power loss, fast switching and resistance to transients are needed. Features - 6.3 A, -30 V, RDS(ON) =0.025 Ω @ VGS = -10 V RDS(ON) =0.040 Ω @ VGS = -4.5 V. Super SOTTM-8 package: small footprint (40% less than SO-8);low profile (1mm thick);maximum power perable to SO-8. High density cell design for extremely low RDS(ON). SOT-23 Super SOTTM-6 Super SOTTM-8 SO-8 SOT-223 SOIC-16 6 85 5 6 4 3 2 1 pin 1 Super SOT TM-8 7...