FDS6692 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 12 A, 30 V. RDS(ON) = 12 mΩ @ V GS = 10 V. RDS(ON) = 14.5 mΩ @ V GS = 4.5 V Applications - DC/DC converter - High performance trench technology for extremely low RDS(ON) - Low gate charge (18 n C typical) - High power and current handling capability 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25o C unless otherwise noted Parameter Ratings 30 ± 16 (Note 1a) Units 12 50 2.5 1.2 1.0 -55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 ° C/W ° C/W °...