FDS6692A Datasheet | Fairchild Semiconductor

Features - RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A - RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A - High performance trench technology for extremely low RDS(ON) - Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. - High power and current handling capability - Ro HS pliant Applications - DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 .fairchildsemi. FDS6692A N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25o C, VGS = 10V, RθJA = 85o C/W) Continuous (TA = 25o C, VGS = 4.5V, RθJA = 85o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Operating and Storage Temperature Ratings 30 ±20 9 8.2 48 79 1.47 -55 to 150 Units V V A A A m J W o C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 50 o C/W 85 o C/W Package Marking and Ordering Information Device Marking FDS6692A Device...