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FDS6692A - N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

High power and current handling c

Key Features

  • RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A.
  • RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A.
  • High performance trench technology for extremely low RDS(ON).
  • Low gate charge General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6692A N-Channel PowerTrench® MOSFET January 2010 FDS6692A N-Channel PowerTrench® MOSFET 30V, 9A, 11.5mΩ Features „ RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A „ RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A „ High performance trench technology for extremely low RDS(ON) „ Low gate charge General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. „ High power and current handling capability „ RoHS Compliant Applications „ DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 www.fairchildsemi.