Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
- Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V.
- 3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS =.
- 10 V RDS(ON) = 200 mΩ @ V GS =.
- 4.5 V.
- Q2.
- Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Q2
D1 D
D1 D
DD2 D2 D
5 6
Q1
4 3 2 1
SO-8
Pin 1 SO-8
G2 S2 G G1 S S1 S
7 8
S
Absolute Maximum Ratings.
FDS8333C Datasheet
