Datasheet Details
| Part number | FDS86106 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.50 KB |
| Description | MOSFET |
| Datasheet | FDS86106-FairchildSemiconductor.pdf |
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Overview: FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.
| Part number | FDS86106 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 214.50 KB |
| Description | MOSFET |
| Datasheet | FDS86106-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications Synchronous Rectifier Primary Switch For Bridge Topology D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C P
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