FDS86106 Description
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching...
FDS86106 Key Features
- Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
- Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- RoHS pliant