Datasheet Summary
FDS86106 N-Channel Power Trench® MOSFET
July 2011
N-Channel Power Trench® MOSFET
100 V, 3.4 A, 105 mΩ
Features
General Description
- Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A
- Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
- Synchronous Rectifier
- Primary Switch For Bridge Topology
SO-8
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