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FDS86106 - MOSFET

General Description

Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Test

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description „ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A „ Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.