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FDS86252 - MOSFET

General Description

Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ Features General Description „ Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A „ Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.