Datasheet Summary
FDS86252 N-Channel Power Trench® MOSFET
April 2011
N-Channel Power Trench® MOSFET
150 V, 4.5 A, 55 mΩ
Features
General Description
- Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Application
- DC-DC Conversion
SO-8
Pin...