FDU8870 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Features - r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A - r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A - High performance trench technology for extremely low r DS(ON) - Low gate charge Applications - DC/DC converters - High power and current handling capability I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) MOSFET Maximum Ratings T C = 25°C unless otherwise noted Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) (Note 1) ID Continuous (T C = 25 o C, V GS = 4.5V) (Note 1) Continuous (T amb = 25 o C, VGS = 10 V, with Rθ JA = 52 o C/W) Pulsed E AS PD TJ, T STG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25 o C Operating and Storage Temperature 160 150 21 Figure 4 690 160 1.07 -55 to 175 A A A A m J W W/ o C o C Ratings 30 ± 20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 0.94 100 52 o C/W o C/W o C/W Package Marking and Ordering Information Device Marking FDD8870 FDU8870 Device FDD8870 FDU8870 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 12mm N/A Quantity 2500 units 75 units ©2004 Fairchild Semiconductor Corporation FDD8870 / FDU8870 Rev. C FDD8870 / FDU8870 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics B VDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, V GS = 0V V DS = 24V V GS = 0V V GS = ± 20V T C = 150 o C 30 1 250 ± 100 V µA n A On...