FDU8878 Datasheet | Fairchild Semiconductor

Features r DS(ON) = 15mΩ, VGS = 10V, ID = 35A r DS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. r DS(ON) Low gate charge High power and current handling capability Application - DC / DC Converters Ro HS pliant S D-PAK (TO-252) I-PAK (TO-251AA) ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev.1.2 .fairchildsemi. FDD8878 / FDU8878 N-Channel Power Trench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25o C, VGS = 10V) (Note 1) Continuous (TC = 25o C, VGS = 4.5V) (Note 1) Continuous (Tamb = 25o C, VGS = 10V, with RθJA = 52o C/W) Pulsed Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 40 36 11 Figure 4 25 40 0.27 -55 to 175 Units V V A A A A m J W W/o C o C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 3.75 100 52 o C/W o C/W o C/W Package Marking and Ordering...